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M12S16161A0707 - 512K x 16Bit x 2Banks Synchronous DRAM

M12S16161A0707_4895098.PDF Datasheet


 Full text search : 512K x 16Bit x 2Banks Synchronous DRAM


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PART Description Maker
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M12S16161A07 M12S16161A-7BG M12S16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
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T431616D T431616E (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
TMT
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
M52S32162A M52S32162A-10BG M52S32162A-10TG M52S321 1M x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
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N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
ON Semiconductor
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Samsung semiconductor
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Samsung Electronic
Samsung semiconductor
N08L1618C2AB2 N08L1618C2A N08L1618C2AB 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit
NANOAMP[NanoAmp Solutions, Inc.]
 
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